Nonlinear luminescence and time-resolved diffusion profiles of photoexcited carriers in semiconductors
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 659-661
- https://doi.org/10.1063/1.93604
Abstract
We describe a new and general optical technique for studying carrier dynamics in semiconductors which is based on the luminescence nonlinearity resulting from the bimolecular recombination of the carriers. The technique has been used to obtain time-resolved diffusion profiles and the hole mobility in photoexcited GaAs.Keywords
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