Piezoresistance and Hole Transport in Beryllium-Doped Silicon

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Abstract
The resistivity and piezoresistance of p‐type silicondoped with beryllium have been studied as a function of temperature, crystal orientation, and berylliumdoping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the berylliumdoping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium‐doped silicon is slightly larger than for silicondoped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p‐type silicon.