Silicon wafer-to-wafer bonding at T<200 °C with polymethylmethacrylate
- 25 July 1994
- journal article
- letter
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 439-441
- https://doi.org/10.1063/1.112326
Abstract
A versatile method for low temperature (T<200 °C) bonding of silicon and oxidized silicon wafers is reported using spun cast films of polymethylmethacrylate (PMMA) as the bonding material. The PMMA films are thermoplastic, transparent, dielectric, planarizing, and photopatternable. Bonding was achieved with both unpatterned and patterned, 1‐μm‐thick films. Tensile bond strengths of 3.12 MPa were typical (although the strongest bond had a strength of 5.85 MPa) and thin film stresses of 10 MPa (tensile) were measured. Photopatterned PMMA films exhibited approximately 14% lateral pattern smear after bonding.Keywords
This publication has 4 references indexed in Scilit:
- On the attainment of optimum developer parameters for PMMA resistSuperlattices and Microstructures, 1992
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- A Two Layer Photoresist Process In A Production EnvironmentPublished by SPIE-Intl Soc Optical Eng ,1983
- Practicing the Novolac deep-UV portable conformable masking techniqueJournal of Vacuum Science and Technology, 1981