Polarization-dependent reflectivity from dielectric nanowires

The presence of GaN nanowires grown primarily normal to the surface of a sapphire substrate has a dramatic influence on the polarization dependence of laser light reflectivity at $\text{λ=1550-}\mathrm{nm}$ wavelength. Even at 12% substrate surface coverage, there is a factor of 2 enhancement in polarization dependence of reflectivity relative to bulk sapphire at values of incident angle greater than $\text{φ=72°.}$