Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
- 1 July 1999
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 33 (7) , 740-743
- https://doi.org/10.1134/1.1187773
Abstract
It is shown that photosensitive AgIn5S8/(InSe, GaSe) heterojunctions can be fabricated using bulk crystals grown from the melt and from the vapor phase or polycrystalline thin films of the ternary compound prepared by pulsed laser evaporation. The spectral curves of the photosensitivity of the heterojunctions are investigated as a function of the photodetection geometry. It is concluded that the resulting structure have a promising potential as wideband and selective photodetectors.Keywords
This publication has 2 references indexed in Scilit:
- A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cell structuresSolar Energy Materials and Solar Cells, 1996
- Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substratesApplied Physics Letters, 1994