The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants
- 1 May 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 112 (1-4) , 139-143
- https://doi.org/10.1016/0168-583x(95)01243-5
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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