A mobility calculation for a GaAs/GaAlAs superlattice
- 1 August 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (2) , 133-136
- https://doi.org/10.1088/0268-1242/1/2/007
Abstract
The authors consider a GaAs/GaAlAs superlattice with a small electric field applied perpendicular to the layer planes. The electronic structure is examined in the envelope function approximation and the resulting miniband structure is used in a Boltzmann treatment of the polar optic phonon limited mobility at 300K. The relaxation time approximation is inadequate due to the inelasticity of the scattering mechanism and the anisotropy of the minibands. The Boltzmann equation is solved exactly using an iterative method and mobilities are found which are twice as large as those obtained in the relaxation time approximation.Keywords
This publication has 7 references indexed in Scilit:
- On the accuracy of the effective mass approximation for electron scattering at heterojunctionsJournal of Physics C: Solid State Physics, 1985
- Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurementsApplied Physics Letters, 1985
- Phonon-limited near equilibrium transport in a semiconductor superlatticeJournal de Physique, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- The Growth of a GaAs–GaAlAs SuperlatticeJournal of Vacuum Science and Technology, 1973
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970
- Theory of electrical breakdown in ionic crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937