New pseudomorphic N/sup -//N/sup +/ GaAs/InGaAs/GaAs power HEMT with high breakdown voltages
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 109-112
- https://doi.org/10.1109/gaas.1991.172646
Abstract
A pseudomorphic N/sup -//N/sup +/GaAs/InGaAs/GaAs power HEMT (high electron mobility transistor) with high breakdown voltages (VB) of more than 20 V and full channel current of 460 mA/mm is described. This power HEMT allows the simultaneous improvement of output power (P/sub out/), linear gain (G/sub L/), and power-added efficiency (N/sub add/) over GaAs FETs. A record maximum output power of 4.7 W at 14.25 GHz was achieved by a large 10.5-mm-wide HEMT chip with G/sub L/ of 8 dB and N/sub add/ of 25%.<>Keywords
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