Kinetics of Si growth on Ge(100) in Si2H6 gas-source molecular beam epitaxy and low-pressure chemical vapor deposition
- 20 January 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 323 (3) , 269-274
- https://doi.org/10.1016/0039-6028(94)00672-5
Abstract
No abstract availableKeywords
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