Substrate resistance effect on the Fmax parameter of isolated BJT in BiCMOS process

Publisher Website

20 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/icmts.1999.766210

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
IEEE Journal of Solid-State Circuits, 1997
Recent progress in bipolar transistor technology
IEEE Transactions on Electron Devices, 1995