Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere
- 1 April 1989
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 48 (4) , 315-319
- https://doi.org/10.1007/bf00618891
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- MOVPE growth and characteristics of Fe-doped semi-insulating InP layersElectronics Letters, 1986
- Semi-Insulating Behavior in Undoped LEC InP after Annealing in PhosphorousMaterials Science Forum, 1986
- Transport properties and defects in semi-insulating and Si-implanted InPJournal of Electronic Materials, 1982
- Vapor growth of InP for MESFET’SJournal of Electronic Materials, 1980
- Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphideSolid-State Electronics, 1977
- Semi-insulating properties of Fe-doped InPElectronics Letters, 1975
- Diffusion in Compound SemiconductorsPhysical Review B, 1961