Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:HMRS Proceedings, 1994
- A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate TemperaturesMRS Proceedings, 1992
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical AnnealingJapanese Journal of Applied Physics, 1991