Determination of the resonant-state energy of an In0.53Ga0.47As/AlAs pseudomorphic resonant tunneling barrier grown by MBE
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 371-374
- https://doi.org/10.1016/0022-0248(89)90421-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room TemperatureJapanese Journal of Applied Physics, 1987
- Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBEJapanese Journal of Applied Physics, 1987
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBEJapanese Journal of Applied Physics, 1986
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Observation of a negative differential resistance due to tunneling through a single barrier into a quantum wellApplied Physics Letters, 1986
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier WidthsJapanese Journal of Applied Physics, 1986
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling DiodeJapanese Journal of Applied Physics, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Tunneling in a finite superlatticeApplied Physics Letters, 1973