Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon-germanium alloys
- 1 May 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (9) , 4341-4343
- https://doi.org/10.1063/1.350817
Abstract
Silicon germanium (Si1−xGex) alloys have been grown by the floating zone method with x varying from 0.5 to 20 wt %. Resistivity and Hall effect measurements have been carried out in the temperature range 80–410 K. The Hall mobility has been found to decrease with Ge concentration varying between 0.5 and 4.5 wt % and thereafter an increase has been observed. The Hall mobility has also been found to decrease with an increase in temperature in these alloys following the AT−y relation, where A is a constant and T is the temperature in K.This publication has 6 references indexed in Scilit:
- The determination of minority carrier lifetime in polycrystalline silicon by the photoconductivity decay methodSolar Cells, 1985
- Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobilityJournal of Applied Physics, 1985
- Solar cells from metallurgical silicon zone melted in polycrystalline silicon tubesSolar Cells, 1982
- On the impurity distribution in a thin silicon rod grown by pulling from a melt on pedestalJournal of Crystal Growth, 1982
- Magnetoresistance of Germanium-Silicon AlloysPhysical Review B, 1955
- Electrical Properties of Germanium-Silicon AlloysPhysical Review B, 1955