Electron beam lithography of sub-0.1μm circuits
- 1 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 183-186
- https://doi.org/10.1016/0167-9317(89)90043-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length levelIEEE Electron Device Letters, 1988
- Lithography for ultrashort channel silicon field effect transistor circuitsJournal of Vacuum Science & Technology B, 1988
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987
- Point exposure distribution measurements for proximity correction in electron beam lithography on a sub-100 nm scaleJournal of Vacuum Science & Technology B, 1987
- Measurement of the profile of finely focused electron beams in a scanning electron microscopeJournal of Physics E: Scientific Instruments, 1984