Ion implantation damage in quarter micron CMOS technology

24 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 49-52
https://doi.org/10.1109/iit.1996.586116

Abstract

Ion implantation can cause damage by accumulating charge on insulators and floating conductors. This paper describes test structures to study implant damage and summarizes experimental results obtained on charging photoresist and polysilicon structures of varying antenna ratios at different flood-gun conditions.

Keywords

CMOS TECHNOLOGY
ION IMPLANTATION
RESISTS
IMPLANTS
SPACE TECHNOLOGY
MOSFET CIRCUITS
CONDUCTORS
MONITORING
MOS CAPACITORS
BREAKDOWN VOLTAGE

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A fully planarized 0.25 μm CMOS technology for 256 Mbit DRAM and beyond
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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