Sub-band energies of highly strained InGaAs-GaAs quantum wells
- 1 June 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (6) , 597-600
- https://doi.org/10.1088/0268-1242/3/6/015
Abstract
The sub-band energies of InxGa1-xAs quantum wells strained between GaAs barriers and substrate are calculated using a model which takes into account strain, nonparabolicity and quantum well effects. A comparison is made with low-temperature photoluminescence and photoluminescence excitation spectra of InxGa1-xAs quantum wells for which x=0.28. The transitions 1H-1C, 1L-1C and 2H-2C have been identified for the 7.5 nm well.Keywords
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