Some theoretical considerations relating to switching and remanence in ferroelectric/photoconductor memory devices

Publisher Website

1 August 1972

journal article
Published by Taylor & Francis in Ferroelectrics

Vol. 4 (1) , 5-18
https://doi.org/10.1080/00150197208241514

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

STORAGE OF HOLOGRAMS IN A FERROELECTRIC-PHOTOCONDUCTOR DEVICE
Applied Physics Letters, 1970
Non-destructive readout of ferroelectrics by field effect conductivity modulation
Solid-State Electronics, 1968
Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
Solid-State Electronics, 1966
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
Solid-State Electronics, 1965