Metal (CoSi 2)/Insulator (CaF 2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10A) , L1254
- https://doi.org/10.1143/jjap.34.l1254
Abstract
We fabricated a small-area metal (CoSi2)/insulator (CaF2) hot electron transistor using electron-beam lithography. The transistor is composed of a CoSi2/CaF2 (1.9 nm)/CoSi2 (1.9 nm) tunnel emitter and a CaF2 (5 nm) collector barrier on an n-Si(111) substrate. The emitter mesa area is 0.9 × 0.9 µm2. Although the measured characteristics show, for the first time, clear transistor action with a curve similar to those of semiconductor HETs, the collector current increases without saturation due to leakage current through the SiO2 film under the external electrode pads. The intrinsic device characteristics (zero leakage current) exhibited saturation, and a current gain β ≥ 36 was obtained at 77 K.Keywords
This publication has 8 references indexed in Scilit:
- Quantum Interference of Electron Wave in Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Hot Electron Transistor StructureJapanese Journal of Applied Physics, 1994
- Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling DiodeJapanese Journal of Applied Physics, 1994
- Transistor action of metal (CoSi 2 )/insulator (CaF 2 ) hot electron transistor structureElectronics Letters, 1992
- Epitaxial Growth of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structure on Si(111)Japanese Journal of Applied Physics, 1992
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infraredSolid-State Electronics, 1981
- Operation of Tunnel-Emission DevicesJournal of Applied Physics, 1961