A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions
- 28 February 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (2) , 279-286
- https://doi.org/10.1016/0038-1101(90)90167-d
Abstract
No abstract availableKeywords
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