Relaxed SiGe buffers with thicknesses below 0.1 μm
- 1 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 369 (1-2) , 152-156
- https://doi.org/10.1016/s0040-6090(00)00796-3
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- New virtual substrate concept for vertical MOS transistorsThin Solid Films, 1998
- Optical on wafer measurement of Ge content of virtual SiGe-substratesThin Solid Films, 1998
- Ion assisted MBE growth of SiGe nanostructuresThin Solid Films, 1998
- High-mobility Si and Ge structuresSemiconductor Science and Technology, 1997
- Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxyJournal of Applied Physics, 1996
- Semiconductor molecular-beam epitaxy at low temperaturesJournal of Applied Physics, 1995
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- Kinetics of ordered growth of Si on Si(100) at low temperaturesPhysical Review B, 1989
- Growth and properties of Si/SiGe superlatticesSurface Science, 1986