Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 129-135
- https://doi.org/10.1016/0022-0248(91)90444-a
Abstract
No abstract availableKeywords
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