Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration

This publication has 2 references indexed in Scilit:

• Ultra-thin Silicon Nitride Gate Dielectric For Deep-sub-micron CMOS Devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1997
• Highly Reliable Silicon Nitride Thin Films Made by Jet Vapor Deposition
  Japanese Journal of Applied Physics, 1995