Alloying effects in self-assembled InAs/InP dots

This publication has 11 references indexed in Scilit:

• Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
  Applied Physics Letters, 1998
• Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
  Journal of Crystal Growth, 1998
• Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate
  Applied Physics Letters, 1998
• Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots
  MRS Bulletin, 1998
• Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy
  Applied Surface Science, 1998
• Formation mechanism of volcano-like structural defects in multiple periods of InAs quantum dots on GaAs
  Journal of Crystal Growth, 1997
• Surface segregation in (Ga,In)As/GaAs quantum boxes
  Physical Review B, 1997
• Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
  Applied Physics Letters, 1996
• In situ XPS investigation of indium surface segregation for Ga1−xInxAs and Al1−xInxAs alloys grown by MBE on InP(001)
  Surface Science, 1996
• Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy
  Applied Physics Letters, 1991