Determination of generation lifetime in intrinsic polycrystalline silicon
- 17 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (16) , 1525-1527
- https://doi.org/10.1063/1.101340
Abstract
A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.Keywords
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