On the MOS depletion of a high-level-injection plasma
- 31 October 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (10) , 1247-1253
- https://doi.org/10.1016/0038-1101(90)90027-c
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- MOS-Controlled thyristors—A new class of power devicesIEEE Transactions on Electron Devices, 1986
- High-level behavior of power rectifiers: A quantitative analysis of the forward voltage dropIEEE Transactions on Electron Devices, 1978
- Effect of carrier lifetime on the forward characteristics of high-power devicesIEEE Transactions on Electron Devices, 1970
- The forward characteristic of silicon power rectifiers at high current densitiesSolid-State Electronics, 1968