Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 188-191
- https://doi.org/10.1016/0022-0248(91)90454-d
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A novel MOVPE reactor with a rotating substrateJournal of Crystal Growth, 1988
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986