GaAs microcavity quantum-well laser with enhanced coupling of spontaneous emission to the lasing mode

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Abstract
We have observed low‐threshold lasing in a GaAs single quantum‐well vertical microcavity. At 4 K the quantum‐well emission linewidth is reduced, and the coupling efficiency β of the spontaneous emission to the lasing mode is improved. The laser threshold pump power obtained for a 200 Å GaAs quantum well pumped by a continuous wave Ti:sapphire laser was 5 mW, corresponding to 85 μW absorbed power. We have compared the experimental results with the theoretical prediction, and estimated the value of β to be 10−2.