Structure of (√3×√3) R 30°-B at the Si interface studied by grazing incidence x-ray diffraction
- 26 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13) , 1225-1227
- https://doi.org/10.1063/1.102522
Abstract
The boron‐induced ( 7/8 × 7/8 )R30° reconstruction at the Si interface has been investigated by grazing incidence x‐ray diffraction. The in‐plane projected struture is found from the structure factors near zero perpendicular momentum transfer. At the a‐Si/Si (111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a ( 7/8 × 7/8 )R30° lattice and the boronsilicon bond is contracted compared with the siliconsilicon bond. Even at the interface between a solid phase epitaxial Si (111) layer and a Si (111) substrate, the boron‐induced ( 7/8 × 7/8 )R30° reconstruction has also been observed and the structure is similar to that observed at the a‐Si/Si (111) interface.Keywords
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