Deep-level photoluminescence spectroscopy of CdTe grown by molecular-beam epitaxy
- 1 April 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (7) , 2670-2671
- https://doi.org/10.1063/1.337898
Abstract
We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular-beam epitaxy at both high- and low-substrate temperatures. This line is in excellent agreement with the E2 line observed by deep-level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.This publication has 9 references indexed in Scilit:
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