GaAs MOS structures with Al2O3 grown by molecular beam reaction under UV excitation
- 1 January 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 56 (1-2) , 81-88
- https://doi.org/10.1016/0040-6090(79)90054-3
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 7 references indexed in Scilit:
- Surface potential of anodized p-GaAs MOS capacitorsApplied Physics Letters, 1978
- Low-temperature plasma oxidation of GaAsApplied Physics Letters, 1978
- Surface states in GaAs tunnel MIS structuresPhysica Status Solidi (a), 1977
- Oxide barriers on GaAs by neutralized ion-beam sputteringJournal of Vacuum Science and Technology, 1977
- Electrical properties of anodic and pyrolytic dielectrics on gallium arsenideJournal of Vacuum Science and Technology, 1977
- Surface States in Tunnelable MOS StructuresJapanese Journal of Applied Physics, 1975
- Tunneling in metal-oxide-silicon structuresSolid-State Electronics, 1967