Esca Studies of the Valence band and Loss Spectra of Semiconductor Films: Ionicity and Chemical Bonding

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Abstract
ESCA valence band and core level loss results have been determined that appear to be directly related to the degree of covalency/ionicity and other bonding features of certain semi-conductor systems. Specific applications are presented that aid in the characterization of the key chemistry of dielectric oxide/semiconductor interfaces and also may help to determine the relative metastability of the solid solution of Group IV elements (e.g., Ge) into certain III-V lattices (e.g., GaAs). It is shown that these features are not detectable through conventional core level shift arguments, and that the aforementioned novel approaches often require high resolution ESCA.