Optical Properties of InGaAs/InP Quantum Wires Defined by High Voltage Electron Beam Lithography at 200 kV
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAsApplied Physics Letters, 1989
- Nanolithography at 350 KV in a TEMMicroelectronic Engineering, 1989
- Very high voltage (500 kV) electron beam lithography for thick resists and high resolutionJournal of Vacuum Science & Technology B, 1987
- 10-nm linewidth electron beam lithography on GaAsApplied Physics Letters, 1983