EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICON
- 1 August 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (3) , 44-45
- https://doi.org/10.1063/1.1723567
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- The Determination of the Type of Stacking Faults in Face Centered Cubic Alloys by Means of Contrast Effects in the Electron MicroscopePhysica Status Solidi (b), 1963
- Anomalous electron absorption effects in metal foils: theory and comparison with experimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962