Electronic States in Polythiophene and Poly(3-methylthiophene) Studied by Photoelectron Spectroscopy in Air
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1606
- https://doi.org/10.1143/jjap.27.l1606
Abstract
The difference of the energy of the top of the valence band in polythiophene and poly(3-methylthiophene) has been evaluated by photoelectron spectroscopy in air to be about 0.2 eV in coincidence with that obtained by cyclic voltammetry in electrolytes. In the doped state of poly(3-methylthiophene) with BF4 -, the threshold energy of the photoemission has been found to decrease by about 0.4 eV compared with the undoped sample. This is discussed in terms of polaron state formation by doping.Keywords
This publication has 10 references indexed in Scilit:
- Fusibility of Polythiophene Derivatives with Substituted Long Alkyl Chain and Their PropertiesJapanese Journal of Applied Physics, 1987
- Electrical and optical properties of polaronic states in conducting polymer, polythiopheneSynthetic Metals, 1987
- Cycle life, stability, and characteristics of color switching cells utilizing polythiophene filmsJournal of Applied Physics, 1987
- Processible and environmentally stable conducting polymersSynthetic Metals, 1986
- Photogeneration of confined soliton pairs (bipolarons) in polythiophenePhysical Review Letters, 1986
- ESR and Transport Studies in Electrochemically Doped Polythiophene FilmJournal of the Physics Society Japan, 1985
- Photoexcitations in poly (thiophene): Photoinduced infrared absorption and photoinduced electron-spin resonancePhysical Review B, 1984
- Polarons and bipolarons in polypyrrole: Evolution of the band structure and optical spectrum upon doingPhysical Review B, 1984
- Externally quenched air counter for low-energy electron emission measurementsReview of Scientific Instruments, 1981
- Soliton dynamics in polyacetyleneProceedings of the National Academy of Sciences, 1980