Comparison between tensile-strained AlGaInP SQWand MQWLDs emitting at 615 nm
- 31 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (7) , 566-568
- https://doi.org/10.1049/el:19940413
Abstract
The optimum design for tensile-strained quantum-well structures, and the laser characteristics of AlGaInP LDs emitting at 615-635 nm are investigated. MQW structures are effective in reducing threshold currents at wavelengths shorter than 620 nm. The lowest threshold current of 95 mA at 20°C is attained in a quaternary MQW LD emitting at 615 nm.Keywords
This publication has 5 references indexed in Scilit:
- Tensile-strained AlGaInP single-quantum-well LDs emitting at 615 nmElectronics Letters, 1993
- Low-threshold operation of tensile-strained GaInP/AlGaInP MQW LDs emitting at 625 nmElectronics Letters, 1993
- Tensile strained QW structure for low-threshold operation of short-wavelength AlGaInP LDs emitting in the 630nm bandElectronics Letters, 1993
- Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasersIEEE Photonics Technology Letters, 1992
- Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrierElectronics Letters, 1992