Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (10) , 1081-1083
- https://doi.org/10.1109/68.163739
Abstract
The authors examine the operating characteristics of short wavelength (617< lambdaKeywords
This publication has 19 references indexed in Scilit:
- Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laserApplied Physics Letters, 1992
- Low threshold current density (760 A/cm 2 ) and high power (45 mW) operation of strained Ga 0.42 In 0.58 P multiquantum well laser diodes emitting at 632 nmElectronics Letters, 1992
- High performance 634 nm InGaP/InGaAlP strained quantum well lasersElectronics Letters, 1991
- Low (2.0 kA/cm 2 ) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substratesElectronics Letters, 1991
- Low threshold current laser emitting at 637 nmElectronics Letters, 1991
- Effects of strained-layer structures on the threshold current density of AlGaInP/GaInP visible lasersApplied Physics Letters, 1991
- Temperature dependence of the threshold current for InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991
- Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasersApplied Physics Letters, 1990
- Atomspheric pressure organometallic vapor-phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wellsJournal of Applied Physics, 1990
- Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrateElectronics Letters, 1989