Why is a quantum-confined stark shift absent in type-I strained symmetric quantum wells?
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 465-468
- https://doi.org/10.1016/s0022-0248(96)00932-3
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Murata Science Foundation
- Asahi Glass Foundation
- Indonesia Toray Science Foundation
This publication has 11 references indexed in Scilit:
- Absence of Stark shift in strained Si1−xGex/Si type-I quantum wellsApplied Physics Letters, 1996
- Quantitative analysis of light emission from SiGe quantum wellsJournal of Crystal Growth, 1995
- Gas-source molecular beam epitaxy and luminescence characterization of strained Si1−xGex/Si quantum wellsJournal of Crystal Growth, 1994
- Simple method for calculating exciton binding energies in quantum-confined semiconductor structuresPhysical Review B, 1990
- Observation of large Stark shift in GexSi1−x/Si multiple quantum wellsJournal of Vacuum Science & Technology B, 1990
- Optical studies of GaAs quantum well based field-effect transistorApplied Physics Letters, 1987
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983