GaInAsP/InP planar stripe lasers prepared by using sputtered SiO2 film as a Zn-diffusion mask

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Abstract
The dependence of lasing characteristics on stripe width in GaInAsP/InP double‐heterostructure planar stripe lasers, prepared by using sputtered SiO2 film as a Zn‐diffusion mask, was investigated. The lasers of 10‐, 15‐, and 20‐μm‐wide stripes operated in a fundamental‐transverse mode with more than 20% differential quantum efficiencies per facet, while the 5‐μm‐wide stripe lasers operated in a multi‐transverse‐mode even just above threshold. The threshold current of 5‐μm‐wide stripe lasers increased greatly, and the lasing wavelengths shifted to shorter than those of stripe lasers with larger stripe widths. The 15‐μm‐wide stripe lasers showed good mode characteristics to operate in a fundamental‐transverse mode up to the output power of 22 mW per facet and in a single longitudinal mode over a wide range of currents. The cause of this dependence of lasing characteristics on stripe width was discussed, and it was assumed that the Zn diffusion into the stripe region using a sputtered SiO2 mask is most responsible for the dependence.