CW microwave amplification from circuit-stabilized epitaxial GaAs transferred electron devices
- 1 December 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (6) , 331-337
- https://doi.org/10.1109/jssc.1970.1050138
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- High-power c.w. transferred-electron oscillatorsElectronics Letters, 1970
- Linear Microwave Solid State Transferred Electron Power Amplifiers with a Large Gain-Bandwidth ProductPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- CW microwave amplification from circuit stabilized epitaxial GaAs transferred electron devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- Stabilized Supercritical Transferred Electron AmplifiersIEEE Journal of Solid-State Circuits, 1969
- Broadband power amplification with gunn effect diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- A new high efficient power bulk effect amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- Characterization of bulk negative-resistance diode behaviorIEEE Transactions on Electron Devices, 1967
- Linear microwave amplification with Gunn oscillatorsIEEE Transactions on Electron Devices, 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966