A theory of magnetic freezeout for semiconductors in the ultra-quantum limit
- 14 July 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (13) , 2763-2778
- https://doi.org/10.1088/0022-3719/11/13/022
Abstract
A theory of freezeout is presented for semiconductors for which the freezeout occurs in the ultra-quantum regime, taking into account the level broadening due to the overlap effects. The main purpose of the paper is to obtain the regime of the fields and concentrations for which a freezeout occurs at a given temperature. The theory is illustrated by applying it to GaAs. A reasonably good agreement is obtained with the experimental data.Keywords
This publication has 9 references indexed in Scilit:
- Impurity bands in semiconductors in arbitrary magnetic fieldsSolid State Communications, 1977
- Screening of charged impurities in semiconductors in intense magnetic fieldsJournal of Physics C: Solid State Physics, 1974
- Density of states from moments. Application to the impurity bandJournal of Physics C: Solid State Physics, 1973
- Magnetic Freezeout and Impact Ionization in GaAsPhysical Review B, 1971
- Quantum theory of static shielding of an impurity charge by an electron gas plasma in a magnetic fieldAnnals of Physics, 1969
- Magnetic Freeze-Out of Electrons in Extrinsic SemiconductorsPhysical Review B, 1969
- Magnetic-Field-Induced Mott Transition in SemiconductorsPhysical Review B, 1967
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956