A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (10) , 437-439
- https://doi.org/10.1109/55.43092
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHzIEEE Electron Device Letters, 1988
- Millimeter wave double heterojunction pseudomorphic power HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- 94 GHz transistor amplification using an HEMTElectronics Letters, 1986
- Power and noise performance of the pseudomorphic modulation doped field effect transistor at 60 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Electron-beam fabrication of quarter-micron T-shaped-gate FETs using a new tri-layer resist systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983