Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements

1 September 1986

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 25 (9A) , L798
https://doi.org/10.1143/jjap.25.l798

Abstract

1 µm-long vertical-type amorphous-silicon field-effect transistors with small parasitic elements have been fabricated and evaluated. Field-effect mobility, mutual conductance and input capacitance per unit channel width were 0.1 cm²/Vs,10 µS/mm and 0.55 pF/mm, respectively. Cut-off frequency evaluated from these values was 3 MHz.

Keywords

SILICON FIELD
AMORPHOUS SILICON
TYPE AMORPHOUS
FIELD EFFECT
TRANSISTORS
SUP
PF/MM
INPUT

This publication has 2 references indexed in Scilit:

Two-Dimensional Numerical Analysis of Amorphous-Silicon Field-Effect Transistors
Japanese Journal of Applied Physics, 1985
Proposed vertical-type amorphous-silicon field-effect transistors
IEEE Electron Device Letters, 1984