Agglomeration at Si/Au interfaces: A study with spatially resolved Auger line-shape spectroscopy
- 15 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (8) , 4885-4887
- https://doi.org/10.1103/physrevb.30.4885
Abstract
The first application of spatially resolved Auger line-shape analysis to an inhomogeneous metalsemiconductor interface [thermally agglomerated Si(111)-Au] is presented. The results show that the agglomeration process cannot be simply described as the separation between two immiscible components; an intermixed Si-Au skin is always present on top of the metal islands where a chemical interaction between Si and Au takes place.Keywords
This publication has 20 references indexed in Scilit:
- Compound formation and bonding configuration at the Si-Cu interfacePhysical Review B, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Electronic properties of metal-rich Au-Si compounds and interfacesJournal of Physics C: Solid State Physics, 1982
- Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au systemPhysical Review B, 1982
- Chemical bonding and reactions at the Pd/Si interfacePhysical Review B, 1981
- Chemical bonding and electronic structure ofSiPhysical Review B, 1980
- Nucleation-controlled thin-film interactions: Some silicidesApplied Physics Letters, 1979
- Solid-state and atomic features in the valence-band Auger spectra of copper, silver, and goldSolid State Communications, 1978
- Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical resultsPhysical Review B, 1978
- Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)Physical Review B, 1977