Self-Consistent Treatment of Resonant Subband States in Inversion Layers on HgCdTe
- 15 March 1989
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 8 (6) , 543-548
- https://doi.org/10.1209/0295-5075/8/6/009
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Zener-tunnelling of inversion layer electrons on small gap semiconductorsSolid State Communications, 1988
- Band mixing in narrow gap semiconductorsZeitschrift für Physik B Condensed Matter, 1984
- Electric subbands in the limit EG → 0Surface Science, 1984
- Theory of space-charge layers in narrow-gap semiconductorsSurface Science, 1982
- Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSbJournal of the Physics Society Japan, 1980
- Quantized Surface States of a Narrow-Gap SemiconductorJournal of the Physics Society Japan, 1974
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957