Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

Abstract
We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs.