104 and 134 GHz InGaP/InGaAs HBT oscillators
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 237-240
- https://doi.org/10.1109/gaas.1999.803766
Abstract
In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a phase noise of -72 dBc/Hz at 1 MHz offset. To our knowledge, the 134 GHz oscillator is the highest-frequency fundamental mode oscillator using bipolar device technology ever reported.Keywords
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