Modulation of Flat-band Potential and Increase in Photovoltage for n-Si Electrodes by Formation of Halogen Atom Terminated Surface Bonds
- 1 October 1997
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 26 (10) , 1041-1042
- https://doi.org/10.1246/cl.1997.1041
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurementsSolar Energy Materials and Solar Cells, 1997
- Efficient Photoelectrochemical Solar Cells Equipped with an n‐Si Electrode Modified with Colloidal Platinum ParticlesJournal of the Electrochemical Society, 1994
- In situ bulk lifetime measurement on silicon with a chemically passivated surfaceApplied Surface Science, 1993
- Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutionsApplied Physics Letters, 1992
- Fluorine-containing species on the hydrofluoric acid etched silicon single-crystal surfaceJournal of Applied Physics, 1991
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Effect of microscopic discontinuity of metal overlayers on the photovoltages in metal-coated semiconductor-liquid junction photoelectrochemical cells for efficient solar energy conversionThe Journal of Physical Chemistry, 1988
- Surface methoxylation as the key factor for the good performance of n-Si/methanol photoelectrochemical cellsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1987
- Effects of Dissolved Cd2+and S2-Ions on the Flatband Potential of CdS Electrode in Aqueous SolutionJapanese Journal of Applied Physics, 1977
- Electronegativity values from thermochemical dataJournal of Inorganic and Nuclear Chemistry, 1961