Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant silicon
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 615-617
- https://doi.org/10.1016/0168-583x(90)90911-d
Abstract
No abstract availableKeywords
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- Nuclear reaction analysis of shallow B and BF2 implants in SiJournal of Applied Physics, 1987
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- ’’NODUS’’—a sensitive new instrument for analyzing the composition of surfacesReview of Scientific Instruments, 1978