Carrier recombination through donors/acceptors in heavily doped silicon
- 15 October 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8) , 636-639
- https://doi.org/10.1063/1.91234
Abstract
Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10−20 cm2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low‐temperature capture cross sections reported for shallow dopants.Keywords
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